ty semiconductor reliability handbook (?handling SSM3K303T high speed switching applications ? 4 v drive ? low on-resistance: r on = 120 m ? (max) (@v gs = 4v) r on = 83 m ? (max) (@v gs = 10v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain?source voltage v ds 30 v gate?source voltage v gss 20 v dc i d 2.9 drain current pulse i dp 5.8 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain?source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cutoff current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 20 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 1 ma 1.1 ? 2.6 v forward transfer admittance ? y fs ? v ds = 5 v, i d = 1.5 a (note2) 2.5 4.9 ? s i d = 1.5 a, v gs = 10 v (note2) ? 64 83 drain?source on-resistance r ds (on) i d = 1.0 a, v gs = 4 v (note2) ? 88 120 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 180 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 100 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 38 ? pf total gate charge q g ? 3.3 ? gate ? source charge q gs ? 1.4 ? gate ? drain charge q gd v ds = 15 v, i ds = 2.9 a v gs = 4 v ? 1.9 ? nc turn-on time t on ? 13 ? switching time turn-off time t off v dd = 10 v, i d = 1.5 a, v gs = 0 to 4 v, r g = 10 ? 14 ? ns drain?source forward voltage v dsf i d = ? 2.9 a, v gs = 0 v (note2) ? ? 0.9 ? 1.25 v note2: pulse test unit: mm weight: 10 mg (typ.) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = 10 v r g = 10 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 4 v 0 10 s r g t f t on 90% 10% 4 v 0 v 10% 90% t off t r v dd v ds ( on ) kke 1 3 1 2 3 2 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3K303T product specification
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